First, nitrogen is incorporated in a surface layer of the gebased material. Nadoped optical germanium bulk crystals, applied physics. A brief summary is given of some material and device issues which have not been addressed in previous chapters. Ultradoped ntype germanium thin films for sensing in the mid. The ge surfaces, examined by xray photoelectron spectroscopy, were suspended. Cmos and the effects of metals on sigebased devices and materials. All important metals are discussed including their origin during crystal andor device manufacturing, their fundamental properties, their characterization techniques and their impact on the electrical device performance. Bradley department of electrical and computer engineering, virginia tech, blacksburg, va 24061, usa. Enrico sangiorgi, in germaniumbased technologies, 2007. Germaniumbased nanomaterials have emerged as important candidates for nextgeneration energystorage devices owing to their unique chemical and physical properties. The authors acknowledge financial support from the european commission through fp6 ist project et4us epitaxial technologies for ultimate scaling and from the greek secretariat for research and technology through project pened03, no ed155. It is shown that germanium is best suited for this purpose based on its properties. Materials science in semiconductor processing special.
Germaniumbased technologies active area 70 nm tin 0. Proceedings of symposium t emrs 2006 spring meeting on germanium based semiconductors from materials to devices. The nook book ebook of the germaniumbased technologies. Read nadoped optical germanium bulk crystals, applied physics a. The dualge path for postsi cmos is becoming an increasingly viable option. New channel materials with high carrier mobility are being investigated as alternatives and have the potential to unlock an era of ultralowpower and highspeed microelectronic devices. It offers a survey of controlling defects in semiconductor devices. Germanium ge is the material used in the first transistor invented by bardeen, brattain, and shockley at bell. Graded silicon germanium layers above and below the channel region improve performance. Physical sciences, engineering and technologychemistry. This is illustrated in figure 1, where products requiring a particular function based a material technology requiring a set of raw materials a can continue to be produced thanks to the. From theory to applied technologies optical science and engineering series.
From materials to devices is the first book to provide a broad, indepth coverage of the field, including recent advances in. From materials to devices is the first book to provide a. Special issues published in materials science in semiconductor processing. What is more, a bridgmantype fiber postprocessing technique was constructed and used for the first time to anneal the polycrystalline te semiconductor core optical fibers. From materials to devicesis the first book to provide a broad, indepth coverage of the field, including recent. A siliconcontaining etch stop layer provides easy placement of a gate dielectric close to the channel.
The sourcedrain engineering of nanoscale germaniumbased. Developments made in this area in different laboratories both in russia and abroad are discussed. Academic and industry research progress in germanium nanodevices. Compared to soi manufacturing, the development of geoi requires adaptation to the available germanium material. From materials to devices is the first book to provide a broad, indepth coverage of the field, including recent advances in getechnology and the fundamentals in material science, device physics and semiconductor processing. Use features like bookmarks, note taking and highlighting while reading germaniumbased technologies. In summary, germanium based channel devices are beginning to show signs of readiness for production, especially in light of recent breakthroughs 200. In the twentyfirst century, the return of advanced ge devices preparing postsi device era. Surface defects and passivation of ge and iiiv interfaces. Germaniumoninsulator geoi structure realized by the.
A quantum well transistor has a germanium quantum well channel region. From materials to devices and wrote monographs on radiation effects in advanced semiconductor materials and devices, fundamental and technological aspects of extended defects in germanium and random telegraph signals in semiconductor. Ge channel devices continue to lag behind, but are also making progress due to improved ohmic contacts 24,145. Germaniumbased nanomaterials for rechargeable batteries.
Metal impurities in silicon and germaniumbased technologies. From materials to devices by cor claeys and eddy simoen hardcover may 7, 2007 nitride semiconductor devices principles and simulation edited by joachim piprek march 27, 2007 isbn 9783527406678. He coedited books on low temperature electronics and germaniumbased technologies. For the temperature window which is relevant for crystal growth and device processing, the firstorder elastic. Hydrobromic acid hbr vapor was used to remove native oxide from an undoped 100 germanium ge wafer with ntype conductivity and to passivate its surface against reoxidation. Germaniumbased technologies by cor claeys overdrive. Osa single crystal tellurium semiconductor core optical. Basic investigations on strained layer growth, interface properties and deviation from equilibrium are done with sigesi heterostructures.
From materials to devices find, read and cite all the research. First results on formation of thin film geoi structures by the smart cut technology are presented in this paper. Germaniumbased metalinsulatorsemiconductor transistors. In contrast to silicon, little is known about the possible gettering approaches that can be applied to ge. Another book, the fundamental and technological aspects of extended defects in. Dissolution chemistry and biocompatibility of silicon and. Second, the nitrogen incorporation is followed by an oxidation step.
Nanoscale measurements of phosphorousinduced lattice. Get your kindle here, or download a free kindle reading app. Current topics of silicon germanium devices current topics of silicon germanium devices kasper, erich 20080730 00. From materials to devicesis the first book to provide a broad, indepth coverage of the field, including recent advances in. Vapor phase passivation of 100 germanium surfaces with. Multiple gate dielectric materials allow use of a highk value gate dielectric. Germanium is an elemental semiconductor, which played an important role in the. In these fields, he has co authored over 1500 journal and conference papers, 12 book chapters and a monograph on radiation effects in advanced semiconductor devices and materials springer, 2002. Materials free fulltext germanium based fieldeffect. Read the sourcedrain engineering of nanoscale germaniumbased mos devices by zhiqiang li available from rakuten kobo. Silicon germanium materials and devices a market and technology overview to 2006. Current topics of silicon germanium devices, applied.
Download it once and read it on your kindle device, pc, phones or tablets. Materials science processing on deepdyve, the largest online rental service for scholarly research with thousands of academic publications available at your fingertips. The first part covers fundamentals, describing the crystallographic. From materials to devices is the first book to provide a broad, indepth coverage of the field, including recent advances in ge technology and the fundamentals in material science, device physics and semiconductor processing.
Germanium is a semiconductor material that formed the basis for the development. A group iiiv barrier layer adds strain to the channel. Advanced material and device applications with germanium. The type of harmful defects is depending on the application that is envisaged. He was also a coeditor of the book germaniumbased technologiesfrom materials to devices 2007, elsevier. Fabrice letertre, in germaniumbased technologies, 2007. Academic and industry research progress in germanium. A method for producing thin, below 6 nm of equivalent oxide thickness, germanium oxynitride layer on gebased materials for use as gate dielectric is disclosed. Although the breakthrough of planar technology and integrated circuits put silicon in the foreground, in recent years there has been a renewed interest in germanium, which has been triggered by its strong potential for deep submicron sub 45 nm technologies.
This book mainly focuses on reducing the high parasitic resistance in the sourcedrain of germanium nmosfet. Semiconductor devices and materials 2002, springer, the chinese translation of which was published in 2008. In the case of substitutional doping, the formulation of predictive models of dopinginduced strain is a complex matter because the theory should compute the dependence of the lattice parameter on two distinct contributions. The possibility of improving the performance of semiconductor integrated circuits by replacing the silicon layer in metalinsulatorsemiconductor mis transistors by a material with higher chargecarrier mobility. Buy metal impurities in silicon and germaniumbased technologies by cor claeys, eddy simoen from waterstones today. Materials, technologies and applications for optical interconnects y. The aim is to give an overview of the physics of extended defects in germanium, i. The results reported here include comprehensive studies of the dissolution by hydrolysis of. Analysis of crack formation in germanium substrate at. Different vacancy and interstitial related defects are studied in function of the crystal growth parameters. Tellurium te semiconductor core optical fibers with silicate glass cladding were drawn by the molten core method.
The contributing authors are international experts with a worldwide recognition and. Materials today vol 10, issue 11, pages 156 november. Semiconducting materials are central to the development of highperformance electronics that are capable of dissolving completely when immersed in aqueous solutions, groundwater, or biofluids, for applications in temporary biomedical implants, environmentally degradable sensors, and other systems. From materials to devices kindle edition by claeys, cor, simoen, eddy. Past events santa clara valleysan francisco chapter of. New channel materials with high carrier mobility are being investigated as alternatives and have. Request pdf on jan 1, 2007, r jones and others published germaniumbased technologies. Research progress of sibased germanium materials and. Ultradoped n type germanium thin films for sensing in.
383 1353 1047 1389 1314 275 1307 1050 1066 467 1462 534 1497 534 1382 347 854 624 1099 1209 843 1493 638 550 784 244 756 106 43 1483